Tag: Gate-all-around Device

  • Nanowires Enable FinFET Successor

    FinFETs Rule At the moment, the dominant transistor technology used to make high density silicon devices is the FinFET. This is made using vertical fins allowing the gate to wrap around the Source and Drain. This improves control of the channel.   Some additional details are available at FinFET   FinFETs have dominated dense semiconductor…